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APTGT150DH120
Asymmetrical - Bridge Fast Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 CR3
VCES = 1200V IC = 150A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT150DH120 - Rev 0
May, 2005
Max ratings 1200 220 150 350 20 690
Unit V A V W
APTGT150DH120
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 500 2.1 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2
Min
Typ 10.7 0.56 0.48 280 40 450 75 290 45 550 90 14 16
Max
Unit nF
ns
ns
mJ
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
50% duty cycle
IF = 150A IF = 150A VR = 600V
di/dt =3000A/s
150 1.6 1.6 170 280 15 29
2.1
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT150DH120 - Rev 0
APTGT150DH120
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.32 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT150DH120 - Rev 0
May, 2005
APTGT150DH120
Typical Performance Curve
Output Characteristics (VGE =15V) Output Characteristics 300 T J = 125C 250
T J=125C VGE =17V VGE=13V VGE =15V VGE=9V
300 250
IC (A)
TJ =25C
200 150 100 50 0 0 1 2 VCE (V) 3 4
IC (A)
200 150 100 50 0 0 1 2 VCE (V)
3
4
300 250 200 IC (A) 150 100 50 0 5
Transfert Characteristics 32
T J=25C TJ=125C
Energy losses vs Collector Current 28 24 E (mJ) 20 16 12 8 4 0 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 250 IC (A)
Eoff Er VCE = 600V VGE = 15V RG = 2.2 TJ = 125C Eoff
Eon
TJ =125C
6
7
8
9
10
11
12
200
250
300
VGE (V) Switching Energy Losses vs Gate Resistance 34 30 26 E (mJ) 22 18 14 10 6 2 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18
Er VCE = 600V VGE =15V IC = 150A T J = 125C
Eon
200 150 100 50 0 0 300 600 900 V CE (V) 1200 1500
VGE =15V TJ=125C RG=2.2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.2 Thermal Impedance (C/W) 0.9 0.16 0.7 0.5 0.08 0.04 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT150DH120 - Rev 0
May, 2005
0.12
APTGT150DH120
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 40 80 120 IC (A) 160 200 240
Hard switching ZCS VCE =600V D=50% RG=2.2 TJ=125C
Forward Characteristic of diode 300 250 200 IC (A) 150 100 50 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
TJ=125C TJ=25C T J=125C TJ=25C
Tc=75C ZVS
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9
Diode
0.7 0.5 0.3
0 0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT150DH120 - Rev 0
May, 2005

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